Strongly Emissive Perovskite Nanocrystals Inks for High Voltage Solar Cells
Liberato Manna a, Mirko Prato a, Francesco Di Stasio a, Francisco Palazon a, Quinten A. Akkerman a b, Prachi Rastogi a b, Giovanni Bertoni a e, James M. Ball c, Annamaria Petrozza c, Marina Gandini c d
a Istituto Italiano di Tecnologia, Genova
b Università degli Studi di Genova, Via Dodecaneso, 31, 16146, Genova
c Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, via Giovanni Pascoli 70/3, 20133, Milan, Italy, Italy
d Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci, 32, Milano, 20133, Italy
e IMEM-CNR, , Parco Area delle Scienze 37a, I-43124 Parma, Italy
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster, Quinten A. Akkerman, 108
Publication date: 7th November 2016

Lead halide based perovskite semiconductors have recently gained wide interest in solid state photovoltaic devices with impressive power conversion efficiencies (now above 20%).[1] While offering a relatively simple and low cost processability, the poor control of their growth processes in thin films represents a major roadblock. Inks based on colloidal suspensions of nanoparticles (NCs) could lead to a better control of the material quality and device reliability, but current NC synthesis methods use bulky, high-boiling point ligands and solvents, limiting their use in applications.[2,3] We report a fast, room-temperature synthesis of inks based on CsPbBr3 perovskite NCs using short, low boiling-point ligands and solvents.[4] Requiring no post-synthesis treatments, the inks are directly used to fabricate thin films of high optoelectronic quality, exhibiting photoluminescence quantum yields higher than 30% and an amplified spontaneous emission threshold as low as 1.5 µJ/cm2. The robustness of such properties is demonstrated by the fabrication of the first nanocrystal-based solar cells, with a density of short circuit current higher than 6 mA/cm2 and open circuit voltages as high as 1.5 V, close to the maximum theoretical values achievable. 

References:

[1] N. J. Jeon, et al., Nat Mater (2014) 13, 897-903

[2] L. Protesescu, et al., Nano Letters (2015), 15, 3692-3696

[3] Q. A. Akkerman, et al., J. Am. Chem. Soc. (2015), 137, 10276-10281

[4] Q. A. Akkerman, et al., submitted



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